Physics-Based Analytical Formulation of the Soft Error Rate in CMOS Circuits
نویسندگان
چکیده
The exponential dependence of the soft-error rate (SER) with critical charge in CMOS circuits, empirically proposed by Hazucha and Svensson, is derived framework diffusion-collection approach. A full analytical formulation established, linking SER physical technological parameters, notably circuit supply voltage, carrier diffusion coefficient ion characteristics.
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2023
ISSN: ['0018-9499', '1558-1578']
DOI: https://doi.org/10.1109/tns.2023.3263106